Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN F Schubert, S Wirth, F Zimmermann, J Heitmann, T Mikolajick, S Schmult Science and technology of advanced materials 17 (1), 239-243, 2016 | 41 | 2016 |
Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy F Schubert, U Merkel, T Mikolajick, S Schmult Journal of Applied Physics 115 (8), 2014 | 23 | 2014 |
Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors A Winzer, N Szabó, J Ocker, R Hentschel, M Schuster, F Schubert, ... Journal of Applied Physics 118 (12), 2015 | 19 | 2015 |
Control of unintentional oxygen incorporation in GaN S Schmult, F Schubert, S Wirth, A Großer, T Mittmann, T Mikolajick Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 16 | 2017 |
Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlattices F Schubert, S Zybell, J Heitmann, T Mikolajick, S Schmult Journal of Crystal Growth 425, 145-148, 2015 | 9 | 2015 |
Plasmaunterstützte Molekularstrahlepitaxie von AlGaN/GaN-Heterostrukturen: Substrateinfluss auf die strukturellen, optischen und elektrischen Eigenschaften epitaktisch … F Schubert | | 2016 |